Homogeneous nucleation near a second phase transition and Ostwald’s step rule
نویسنده
چکیده
Homogeneous nucleation of the new phase of one transition near a second phase transition is considered. The system has two phase transitions, we study the nucleation of the new phase of one of these transitions under conditions such that we are near or at the second phase transition. The second transition is an Ising-like transition and lies within the coexistence region of the first transition. It effects the formation of the new phase in two ways. The first is by reducing the nucleation barrier to direct nucleation. The second is by the system undergoing the second transition and transforming to a state in which the barrier to nucleation is greatly reduced. The second way occurs when the barrier to undergoing the second phase transition is less than that of the first phase transition, and is in accordance with Ostwald’s rule.
منابع مشابه
Homogeneous nucleation of a noncritical phase near a continuous phase transition.
Homogeneous nucleation of a new phase near a second, continuous, transition, is considered. The continuous transition is in the metastable region associated with the first-order phase transition, one of whose coexisting phases is nucleating. Mean-field calculations show that as the continuous transition is approached, the size of the nucleus varies as the response function of the order paramete...
متن کاملHomogeneous crystal nucleation near a metastable fluid-fluid phase transition.
Several scenarios exist for the protein crystallization and aggregation in solutions near a metastable fluid-fluid phase separation below the solubility line. Based on computations, it was proposed that the fluid-fluid critical point enhances the crystallization rate by many orders of magnitude, while, based on experiments, it was proposed that the fluid-fluid spinodal controls the crystallizat...
متن کاملAmorphous-crystalline phase transition during the growth of thin films: The case of microcrystalline silicon
Thin silicon films of varying thickness were deposited on foreign substrates by electron-cyclotron resonance chemical vapor deposition from SiH4-H2 mixtures at 600 K. Optical thickness measurements, Rutherford backscattering, and transmission electron microscopy reveal that a thin amorphous interlayer of some 10 nm thickness has formed upon the substrate, before the growth of a microcrystalline...
متن کاملConditions for metastable crystallization from undercooled melts
The limits of validity of Ostwald’s rule of stages are investigated theoretically in the case of crystallization of undercooled melts. The treatment is within the limits of capillary theory. Two basic models are compared: (1) According to the first one (model A), the phase with lower energy of formation of critical nucleus is predominantly formed. In an enantiotropic-type phase diagram there is...
متن کاملScaling theory for the free-energy barrier to homogeneous nucleation of a non-critical phase near a critical point
Homogeneous nucleation of a new phase near an Ising-like critical point of another phase transition is studied. A scaling analysis shows that the free energy barrier to nucleation contains a singular term with the same scaling as the order parameter associated with the critical point. The total magnetisation of the nucleus scales as the response function and so it diverges. Vapour-liquid critic...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2001